Hi, ricky.
Sorry for the delay. Please refer to the answers below from the Applications Engineer of MAT04 and MAT14.
1. Regarding Figure 5 in MAT14 Data Sheet, Base Emitter-On-Voltage, they need the graph to Ic=1pA.
We have the data down to Ic = 100pA and Vbe ≈ 0.14V when we gathered data during characterization.
2. They need the Collector-to-Substrate Leakage vs. Temperature graph. They especially interested in the leakage at around 0V to 5V of collector-to-Substrate voltage.
The Collector-to-Substrate Leakage vs. Temperature was not measured during characterization and it was not specified in the datasheet for both MAT04 and MAT14.
3. Figure 14 of MAT14 Data Sheet shows Collector-to-Collector Leakage vs., Temperature. They would like to see the same graph of MAT04 for the comparison purpose.
Same thing here. We do not have the data for MAT04 Collector-to-Collector Leakage vs. Temperature graph. MAT14 data was added in later.
4. The information of structural difference between MAT04 and MAT14, such as p/n area size, transistor size, insulation size etc.
MAT04 and MAT14 are equivalent in device size, technology and process.
Regards,
Anna